обратное напряжение затвор-исток
-
Обозначение
UЗИобр
UGSR
[ГОСТ 19095-73]
Англо-русский словарь нормативно-технической терминологии. academic.ru. 2015.
Gate turn-off thyristor — For other uses of the word, see GTO (disambiguation). GTO thyristor symbol A gate turn off thyristor (GTO) is a special type of thyristor, a high power semiconductor device. GTOs, as opposed to normal thyristors, are fully controllable switches… … Wikipedia
Reverse Short Channel Effect — The reverse short channel effect is a secondary effect describing the reduction in threshold voltage Vth in MOSFETs with non uniformly doped channel regions as the gate length increases. Since drive current is primarily determined by Vth, longer… … Wikipedia
Insulated-gate bipolar transistor — The insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device, noted for high efficiency and fast switching. It switches electric power in many modern appliances: electric cars, variable speed refrigerators, air… … Wikipedia
Current source — Figure 1: An ideal current source, I, driving a resistor, R, and creating a voltage V A current source is an electrical or electronic device that delivers or absorbs electric current. A current source is the dual of a voltage source. The term… … Wikipedia
CV/Gate — (an abbreviation of Control Voltage/Gate) is an analog method of controlling synthesizers, drum machines and other similar equipment with external sequencers. The Control Voltage typically controls pitch and the Gate signal controls note on/off.… … Wikipedia
High-voltage direct current — HVDC or high voltage, direct current electric power transmission systems contrast with the more common alternating current systems as a means for the bulk transmission of electrical power. The modern form of HVDC transmission uses technology… … Wikipedia
Insulated Gate Bipolar Transistor — Transistor bipolaire à grille isolée Symbole usuel de l’IGBT Le transistor bipolaire à grille isolée (IGBT, de l’anglais Insulated Gate Bipolar Transistor) est un dispositif semi conducteur de la famille des transistors qui est utilisé comme… … Wikipédia en Français
Insulated gate bipolar transistor — Transistor bipolaire à grille isolée Symbole usuel de l’IGBT Le transistor bipolaire à grille isolée (IGBT, de l’anglais Insulated Gate Bipolar Transistor) est un dispositif semi conducteur de la famille des transistors qui est utilisé comme… … Wikipédia en Français
обратное напряжение затвор-исток — Обозначение UЗИобр UGSR [ГОСТ 19095 73] Тематики полупроводниковые приборы EN reverse gate source (d. c.) voltage DE Gate Source Sperrspannung FR tension inverse (continue) grille source … Справочник технического переводчика
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
CMOS — For other uses, see CMOS (disambiguation). CMOS inverter (NOT logic gate) Complementary metal–oxide–semiconductor (CMOS) ( … Wikipedia
